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1 ipb009n03lg rev.2.0,2016-04-21 final data sheet d2-pak7pin mosfet optimos a 3power-transistor ,30v features ?mosfetfororinganduninterruptiblepowersupply ?qualifiedaccordingtojedec 1) fortargetapplications ?n-channel ?logiclevel ?ultra-lowon-resistance r ds(on) ?100%avalanchetested ?pb-freeplating;rohscompliant table1keyperformanceparameters parameter value unit v ds 30 v r ds(on),max 0.95 m w i d 180 a type/orderingcode package marking relatedlinks ipb009n03l g pg-to263-7 009n03l - 1) j-std20 and jesd22 1 7 tab d r a i n p i n 4 , t a b g a t e p i n 1 s o u r c e p i n 2 , 3 , 5 , 6 , 7
2 optimos a 3power-transistor ,30v ipb009n03lg rev.2.0,2016-04-21 final data sheet tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 1 7 tab d r a i n p i n 4 , t a b g a t e p i n 1 s o u r c e p i n 2 , 3 , 5 , 6 , 7
3 optimos a 3power-transistor ,30v ipb009n03lg rev.2.0,2016-04-21 final data sheet 1maximumratings at t a =25c,unlessotherwisespecified table2maximumratings values min. typ. max. parameter symbol unit note/testcondition continuous drain current i d - - - - - - - - 180 180 180 180 a v gs =10v, t c =25c v gs =10v, t c =100c v gs =4.5v, t c =25c v gs =4.5v, t c =100c pulsed drain current 1) i d,pulse - - 1260 a t c =25c avalanche current, single pulse 2) i as - - 100 a t c =25c avalanche energy, single pulse e as - - 610 mj i d =100a, r gs =25 w reversedioded v /d t d v /d t - - 6 kv/s i d =180a, v ds =24v,d i /d t =200a/s, t j,max =175c gate source voltage v gs -20 - 20 v - power dissipation p tot - - 250 w t c =25c operating and storage temperature t j , t stg -55 - 175 c iec climatic category; din iec 68-1: 55/175/56 2thermalcharacteristics table3thermalcharacteristics values min. typ. max. parameter symbol unit note/testcondition thermal resistance, junction - case r thjc - - 0.6 k/w - smd version, device on pcb, minimal footprint r thja - - 62 k/w - smd version, device on pcb, 6 cm2 cooling area 3) r thja - - 40 k/w - 1) see diagram 3 for more detailed information 2) see diagram 13 for more detailed information 3) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. 1 7 tab d r a i n p i n 4 , t a b g a t e p i n 1 s o u r c e p i n 2 , 3 , 5 , 6 , 7
4 optimos a 3power-transistor ,30v ipb009n03lg rev.2.0,2016-04-21 final data sheet 3electricalcharacteristics table4staticcharacteristics values min. typ. max. parameter symbol unit note/testcondition drain-source breakdown voltage v (br)dss 30 - - v v gs =0v, i d =1ma gate threshold voltage v gs(th) 1 - 2.2 v v ds = v gs , i d =250a zero gate voltage drain current i dss - - 0.1 20 2 200 a v ds =30v, v gs =0v, t j =25c v ds =30v, v gs =0v, t j =125c gate-source leakage current i gss - 10 100 na v gs =20v, v ds =0v drain-source on-state resistance r ds(on) - - 0.95 0.7 1.3 0.95 m w v gs =4.5v, i d =100a v gs =10v, i d =100a gate resistance r g - 1.5 - w - transconductance g fs 180 370 - s | v ds |>2| i d | r ds(on)max , i d =100a table5dynamiccharacteristics values min. typ. max. parameter symbol unit note/testcondition input capacitance c iss - 19000 25000 pf v gs =0v, v ds =15v, f =1mhz output capacitance c oss - 5700 7600 pf v gs =0v, v ds =15v, f =1mhz reverse transfer capacitance c rss - 360 - pf v gs =0v, v ds =15v, f =1mhz turn-on delay time t d(on) - 26 - ns v dd =15v, v gs =10v, i d =100a, r g,ext =1.6 w rise time t r - 14 - ns v dd =15v, v gs =10v, i d =100a, r g,ext =1.6 w turn-off delay time t d(off) - 103 - ns v dd =15v, v gs =10v, i d =100a, r g,ext =1.6 w fall time t f - 22 - ns v dd =15v, v gs =10v, i d =100a, r g,ext =1.6 w table6gatechargecharacteristics 1) values min. typ. max. parameter symbol unit note/testcondition gate to source charge q gs - 50 - nc v dd =15v, i d =100a, v gs =0to4.5v gate charge at threshold q g(th) - 28 - nc v dd =15v, i d =100a, v gs =0to4.5v gate to drain charge q gd - 24 - nc v dd =15v, i d =100a, v gs =0to4.5v switching charge q sw - 46 - nc v dd =15v, i d =100a, v gs =0to4.5v gate charge total q g - 110 146 nc v dd =15v, i d =100a, v gs =0to4.5v gate plateau voltage v plateau - 2.9 - v v dd =15v, i d =100a, v gs =0to4.5v gate charge total q g - 227 - nc v dd =15v, i d =100a, v gs =0to10v gate charge total, sync. fet q g(sync) - 95 - nc v ds =0.1v, v gs =0to4.5v output charge q oss - 148 - nc v dd =15v, v gs =0v 1) see 2 gate charge waveforms 2 for parameter definition 1 7 tab d r a i n p i n 4 , t a b g a t e p i n 1 s o u r c e p i n 2 , 3 , 5 , 6 , 7
5 optimos a 3power-transistor ,30v ipb009n03lg rev.2.0,2016-04-21 final data sheet table7reversediode values min. typ. max. parameter symbol unit note/testcondition diode continuous forward current i s - - 180 a t c =25c diode pulse current i s,pulse - - 1260 a t c =25c diode forward voltage v sd - 0.82 1 v v gs =0v, i f =100a, t j =25c reverse recovery charge q rr - 135 - nc v r =15v, i f = i s ,d i f /d t =400a/s 1 7 tab d r a i n p i n 4 , t a b g a t e p i n 1 s o u r c e p i n 2 , 3 , 5 , 6 , 7
6 optimos a 3power-transistor ,30v ipb009n03lg rev.2.0,2016-04-21 final data sheet 4electricalcharacteristicsdiagrams diagram1:powerdissipation t c [c] p tot [w] 0 50 100 150 200 0 50 100 150 200 250 300 p tot =f( t c ) diagram2:draincurrent t c [c] i d [a] 0 50 100 150 200 0 40 80 120 160 200 i d =f( t c ); v gs 3 10v diagram3:safeoperatingarea v ds [v] i d [a] 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 10 3 10 4 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =25c; d =0;parameter: t p diagram4:max.transientthermalimpedance t p [s] z thjc [k/w] 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 single pulse z thjc =f( t p );parameter: d = t p / t 1 7 tab d r a i n p i n 4 , t a b g a t e p i n 1 s o u r c e p i n 2 , 3 , 5 , 6 , 7
7 optimos a 3power-transistor ,30v ipb009n03lg rev.2.0,2016-04-21 final data sheet diagram5:typ.outputcharacteristics v ds [v] i d [a] 0 1 2 3 0 200 400 600 800 1000 4.5 v 5 v 10 v 4 v 3.5 v 3.2 v 3 v 2.8 v i d =f( v ds ); t j =25c;parameter: v gs diagram6:typ.drain-sourceonresistance i d [a] r ds(on) [m w ] 0 40 80 120 160 200 0.0 0.4 0.8 1.2 1.6 2.0 3.2 v 3.5 v 4 v 4.5 v 5 v 6 v 10 v r ds(on) =f( i d ); t j =25c;parameter: v gs diagram7:typ.transfercharacteristics v gs [v] i d [a] 0 1 2 3 4 5 0 200 400 600 800 1000 175 c 25 c i d =f( v gs );| v ds |>2| i d | r ds(on)max ;parameter: t j diagram8:typ.forwardtransconductance i d [a] g fs [s] 0 40 80 120 160 200 0 100 200 300 400 500 g fs =f( i d ); t j =25c 1 7 tab d r a i n p i n 4 , t a b g a t e p i n 1 s o u r c e p i n 2 , 3 , 5 , 6 , 7
8 optimos a 3power-transistor ,30v ipb009n03lg rev.2.0,2016-04-21 final data sheet diagram9:drain-sourceon-stateresistance t j [c] r ds(on) [m w ] -60 -20 20 60 100 140 180 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 98 % typ r ds(on) =f( t j ); i d =100a; v gs =10v diagram10:typ.gatethresholdvoltage t j [c] v gs(th) [v] -60 -20 20 60 100 140 180 0.0 0.5 1.0 1.5 2.0 2.5 v gs(th) =f( t j ); v gs = v ds ; i d =1ma diagram11:typ.capacitances v ds [v] c [pf] 0 10 20 30 10 2 10 3 10 4 10 5 ciss coss crss c =f( v ds ); v gs =0v; f =1mhz diagram12:forwardcharacteristicsofreversediode v sd [v] i f [a] 0.0 0.5 1.0 1.5 2.0 10 0 10 1 10 2 10 3 10 4 25 c 175 c 25 c, 98% 175 c, 98% i f =f( v sd );parameter: t j 1 7 tab d r a i n p i n 4 , t a b g a t e p i n 1 s o u r c e p i n 2 , 3 , 5 , 6 , 7
9 optimos a 3power-transistor ,30v ipb009n03lg rev.2.0,2016-04-21 final data sheet diagram13:avalanchecharacteristics t av [s] i av [a] 10 0 10 1 10 2 10 3 10 0 10 1 10 2 10 3 25 c 100 c 150 c i as =f( t av ); r gs =25 w ;parameter: t j(start) diagram14:typ.gatecharge q gate [nc] v gs [v] 0 50 100 150 200 250 0 2 4 6 8 10 12 24 v 15 v 6 v v gs =f( q gate ); i d =100apulsed;parameter: v dd diagram15:drain-sourcebreakdownvoltage t j [c] v br(dss) [v] -60 -20 20 60 100 140 180 28 29 30 31 32 33 34 v br(dss) =f( t j ); i d =1ma 1 7 tab d r a i n p i n 4 , t a b g a t e p i n 1 s o u r c e p i n 2 , 3 , 5 , 6 , 7 gate charge waveforms
10 optimos a 3power-transistor ,30v ipb009n03lg rev.2.0,2016-04-21 final data sheet 5packageoutlines figure1outlinepg-to263-7,dimensionsinmm/inches 1 7 tab d r a i n p i n 4 , t a b g a t e p i n 1 s o u r c e p i n 2 , 3 , 5 , 6 , 7 gate charge waveforms
11 optimos a 3power-transistor ,30v ipb009n03lg rev.2.0,2016-04-21 final data sheet revisionhistory ipb009n03l g revision:2016-04-21,rev.2.0 previous revision revision date subjects (major changes since last revision) 2.0 2016-04-21 release of final version trademarksofinfineontechnologiesag aurix?,c166?,canpak?,cipos?,coolgan?,coolmos?,coolset?,coolsic?,corecontrol?,crossave?,dave?,di-pol?,drblade?, easypim?,econobridge?,econodual?,econopack?,econopim?,eicedriver?,eupec?,fcos?,hitfet?,hybridpack?,infineon?, isoface?,isopack?,i-wafer?,mipaq?,modstack?,my-d?,novalithic?,omnitune?,optiga?,optimos?,origa?,powercode?, primarion?,primepack?,primestack?,profet?,pro-sil?,rasic?,real3?,reversave?,satric?,sieget?,sipmos?,smartlewis?, solidflash?,spoc?,tempfet?,thinq?,trenchstop?,tricore?. trademarksupdatedaugust2015 othertrademarks allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2016infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.with respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 1 7 tab d r a i n p i n 4 , t a b g a t e p i n 1 s o u r c e p i n 2 , 3 , 5 , 6 , 7 gate charge waveforms

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